Spin transistor in the EuO:Fe/GaAs contact

Please use this identifier to cite or link to this item: https://elar.rsvpu.ru/handle/123456789/15152

Title:	Spin transistor in the EuO:Fe/GaAs contact
Authors:	Bamburov, V. G. Borukhovich, A. S. Igant'Eva, N. I.
Issue Date:	2011
Abstract:	Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact. © 2011 Pleiades Publishing, Ltd.
Keywords:	HIGH TEMPERATURE PRACTICAL IMPLEMENTATION ROOM TEMPERATURE SEMICONDUCTOR COLLECTORS SEMICONDUCTOR CONTACTS SPIN CURRENTS SPIN TRANSISTOR SPINTRONICS EUROPIUM TRANSISTORS CURRENT VOLTAGE CHARACTERISTICS
ISSN:	1028-3358 1562-6903
DOI:	10.1134/S1028335811030062
SCOPUS:	79955851060
WoS:	000289209900001
Appears in Collections:	Научные публикации, проиндексированные в SCOPUS и WoS

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