Please use this identifier to cite or link to this item: http://elar.rsvpu.ru/handle/123456789/15294
Title: Ferromagnetic composite EuO:Fe for the semiconductor spintronics: The mechanisms of high magnetization
Authors: Borukhovich, A. S.
Ignateva, N. I.
Galyas, A. I.
Stognii, A. I.
Anushkevich, K. I. Y.
Issue Date: 2009
Abstract: Magnetic and nuclear gamma resonance (NGR) parameters of EuO:Fe composites are studied. Their properties really meet the requirements imposed on the use of them as spin injectors in semiconductor spin-electronic structures capable of operating under normal conditions at room temperatures.
Keywords: FERROMAGNETIC COMPOSITE
HIGH MAGNETIZATION
NORMAL CONDITION
NUCLEAR GAMMA RESONANCE
ROOM TEMPERATURE
SEMICONDUCTOR SPINTRONICS
ELECTRONIC STRUCTURE
NANOSTRUCTURES
Conference name: International Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2009
Conference date: 26 May 2009 through 29 May 2009
ISSN: 1063-7834
SCOPUS: 2-s2.0-84884376341
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS

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