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dc.contributor.authorBorukhovich, A. S.en
dc.contributor.authorIgnateva, N. I.en
dc.contributor.authorGalyas, A. I.en
dc.contributor.authorStognii, A. I.en
dc.contributor.authorAnushkevich, K. I. Y.en
dc.coverage.spatialRSVPUen
dc.coverage.spatialSCOPUSen
dc.date.accessioned2016-11-22T08:10:54Z-
dc.date.available2016-11-22T08:10:54Z-
dc.date.issued2009-
dc.identifier.issn1063-7834-
dc.identifier.otherhttps://www.scopus.com/record/display.uri?origin=resultslist&eid=2-s2.0-84884376341scopus_url
dc.identifier.urihttps://elar.rsvpu.ru/handle/123456789/15294-
dc.description.abstractMagnetic and nuclear gamma resonance (NGR) parameters of EuO:Fe composites are studied. Their properties really meet the requirements imposed on the use of them as spin injectors in semiconductor spin-electronic structures capable of operating under normal conditions at room temperatures.en
dc.format.mimetypetext/htmlen
dc.language.isoenen
dc.rightsinfo:eu-repo/semantics/restrictedAccessen
dc.sourcePhysics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009en
dc.subjectFERROMAGNETIC COMPOSITEen
dc.subjectHIGH MAGNETIZATIONen
dc.subjectNORMAL CONDITIONen
dc.subjectNUCLEAR GAMMA RESONANCEen
dc.subjectROOM TEMPERATUREen
dc.subjectSEMICONDUCTOR SPINTRONICSen
dc.subjectELECTRONIC STRUCTUREen
dc.subjectNANOSTRUCTURESen
dc.titleFerromagnetic composite EuO:Fe for the semiconductor spintronics: The mechanisms of high magnetizationen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
local.conference.nameInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2009en
local.conference.date26 May 2009 through 29 May 2009-
dcterms.audienceOtheren
dcterms.audienceParents and Familiesen
dcterms.audienceResearchersen
dcterms.audienceSchool Support Staffen
dcterms.audienceStudentsen
dcterms.audienceTeachersen
local.description.firstpage291-
local.description.lastpage294-
local.identifier.scopus84884376341-
local.identifier.eid2-s2.0-84884376341-
local.identifier.affiliationInstitute of Solid State Chemistry, Ural Division RAS, Pervomaiskaya Str. 91, 620219 Yekaterinburg, Russian Federationen
local.identifier.affiliationRussian State Vocational Pedagogical University, 620012 Yekaterinburg, Russian Federationen
local.identifier.affiliationJoint Institute of Solid State and Semiconductor Physics NASB, P. Brovki 17, 220072 Minsk, Belarusen
local.identifier.sourceScopusen
local.identifier.otherBorukhovich, A.S., Institute of Solid State Chemistry, Ural Division RAS, Pervomaiskaya Str. 91, 620219 Yekaterinburg, Russian Federation, Russian State Vocational Pedagogical University, 620012 Yekaterinburg, Russian Federationen
local.identifier.otherIgnateva, N.I., Institute of Solid State Chemistry, Ural Division RAS, Pervomaiskaya Str. 91, 620219 Yekaterinburg, Russian Federationen
local.identifier.otherGalyas, A.I., Joint Institute of Solid State and Semiconductor Physics NASB, P. Brovki 17, 220072 Minsk, Belarusen
local.identifier.otherStognii, A.I., Joint Institute of Solid State and Semiconductor Physics NASB, P. Brovki 17, 220072 Minsk, Belarusen
local.identifier.otherAnushkevich, K.I.Y., Joint Institute of Solid State and Semiconductor Physics NASB, P. Brovki 17, 220072 Minsk, Belarusen
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