Please use this identifier to cite or link to this item: http://elar.rsvpu.ru/handle/123456789/15152
Title: Spin transistor in the EuO:Fe/GaAs contact
Authors: Bamburov, V. G.
Borukhovich, A. S.
Igant'Eva, N. I.
Issue Date: 2011
Abstract: Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact. © 2011 Pleiades Publishing, Ltd.
Keywords: HIGH TEMPERATURE
PRACTICAL IMPLEMENTATION
ROOM TEMPERATURE
SEMICONDUCTOR COLLECTORS
SEMICONDUCTOR CONTACTS
SPIN CURRENTS
SPIN TRANSISTOR
SPINTRONICS
EUROPIUM
TRANSISTORS
CURRENT VOLTAGE CHARACTERISTICS
ISSN: 1028-3358
1562-6903
DOI: 10.1134/S1028335811030062
SCOPUS: 2-s2.0-79955851060
WoS: WOS:000289209900001
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.