Creating a high-temperature spin injector and a spin-wave transistor based on EuO

Abstract

Results of the creation of a high-temperature spin injector and a spin-wave transistor based on EuO are presented. The structure and properties of the EuO:Fe composite providing the ability of its thin films to be promising for creating of semiconductor spin electronic devices that are capable operated at the room temperatires, are given. © 2018, Springer International Publishing AG, part of Springer Nature.