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https://elar.rsvpu.ru/handle/123456789/15152
Title: | Spin transistor in the EuO:Fe/GaAs contact |
Authors: | Bamburov, V. G. Borukhovich, A. S. Igant'Eva, N. I. |
Issue Date: | 2011 |
Abstract: | Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact. © 2011 Pleiades Publishing, Ltd. |
Keywords: | HIGH TEMPERATURE PRACTICAL IMPLEMENTATION ROOM TEMPERATURE SEMICONDUCTOR COLLECTORS SEMICONDUCTOR CONTACTS SPIN CURRENTS SPIN TRANSISTOR SPINTRONICS EUROPIUM TRANSISTORS CURRENT VOLTAGE CHARACTERISTICS |
ISSN: | 1028-3358 1562-6903 |
DOI: | 10.1134/S1028335811030062 |
SCOPUS: | 79955851060 |
WoS: | 000289209900001 |
Appears in Collections: | Научные публикации, проиндексированные в SCOPUS и WoS |
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