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dc.contributor.authorGudkov, V. V.en
dc.contributor.authorLonchakov, A. T.en
dc.contributor.authorZhevstovskikh, I. V.en
dc.contributor.authorSokolov, V. I.en
dc.contributor.authorKorostelin, Yu. V.en
dc.contributor.authorLandman, A. I.en
dc.contributor.authorSurikov, V. T.en
dc.contributor.authorГудков, В. В.ru
dc.coverage.spatialRSVPUen
dc.coverage.spatialSCOPUSen
dc.date.accessioned2016-11-22T08:10:53Z-
dc.date.available2016-11-22T08:10:53Z-
dc.date.issued2009-
dc.identifier.issn9214526-
dc.identifier.otherhttps://www.scopus.com/record/display.uri?origin=resultslist&eid=2-s2.0-74449093230scopus_url
dc.identifier.urihttps://elar.rsvpu.ru/handle/123456789/15286-
dc.description.abstractThe temperature dependence of ultrasonic attenuation is proposed to use for determining concentration of dopand in a diluted magnetic semiconductor. This non-destructive method can be used for the crystal in which attenuation is caused by relaxation in the Jahn-Teller system. Attenuation coefficient per the impurity ion β obtained at a fixed frequency was introduced as a parameter characterizing sensitivity of the method. This parameter was determined for a number of II-VI: 3d semiconductors: ZnSe:Ni2+, ZnTe:Ni2+, ZnSe:V2+, ZnSe:Cr2+, and ZnSe:Fe2+ at 54 MHz. Anomalously large value of β=23×10-18 dB cm2 was found for Cr2+ in ZnSe. © 2009 Elsevier B.V. All rights reserved.en
dc.format.mimetypetext/htmlen
dc.language.isoenen
dc.rightsinfo:eu-repo/semantics/restrictedAccessen
dc.sourcePhysica B: Condensed Matteren
dc.subjectIMPURITYen
dc.subjectSEMICONDUCTORen
dc.subjectTRANSITION METALen
dc.subjectULTRASONIC ATTENUATIONen
dc.subjectATTENUATION COEFFICIENTen
dc.subjectCONCENTRATION OFen
dc.subjectDILUTED MAGNETIC SEMICONDUCTORSen
dc.subjectFIXED FREQUENCYen
dc.subjectIMPURITY IONSen
dc.subjectJAHN-TELLER SYSTEMen
dc.subjectNONDESTRUCTIVE METHODSen
dc.subjectPARAMETER CHARACTERIZINGen
dc.subjectSEMICONDUCTOR TRANSITIONen
dc.subjectTEMPERATURE DEPENDENCEen
dc.subjectULTRASONIC ATTENUATIONen
dc.subjectULTRASONIC TECHNIQUESen
dc.subjectCHROMIUMen
dc.subjectMAGNETIC SEMICONDUCTORSen
dc.subjectTRANSITION METALSen
dc.subjectULTRASONIC TESTINGen
dc.subjectULTRASONIC WAVESen
dc.subjectULTRASONICSen
dc.subjectZINC COMPOUNDSen
dc.subjectCRYSTAL IMPURITIESen
dc.titleCharacterization of II-VI: 3d crystals with the help of ultrasonic techniqueen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dcterms.audienceOtheren
dcterms.audienceParents and Familiesen
dcterms.audienceResearchersen
dcterms.audienceSchool Support Staffen
dcterms.audienceStudentsen
dcterms.audienceTeachersen
local.description.firstpage5244-
local.description.lastpage5246-
local.issue23-24-
local.volume404-
local.identifier.doi10.1016/j.physb.2009.08.284-
local.identifier.scopus74449093230-
local.identifier.eid2-s2.0-74449093230-
local.identifier.affiliationUral State Technical University, 19, Mira st, Ekaterinburg, 620002, Russian Federationen
local.identifier.affiliationRussian State Vocational Pedagogical University, 11, Mashinistroiteley st, Ekaterinburg, 620012, Russian Federationen
local.identifier.affiliationInstitute for Metal Physics, Ural Department, the Russian Academy of Sciences, 18, Sofia Kovalevskay st, Ekaterinburg, 620041, Russian Federationen
local.identifier.affiliationP.N. Lebedev Physical Institute of the Russian Academy of Sciences, 53, Leninskiy pr., Moscow 119991, Russian Federationen
local.identifier.affiliationInstitute of Solid State Chemistry, Ural Department, the Russian Academy of Sciences, 91, Pervomaiskay st, Ekaterinburg, 620041, Russian Federationen
local.identifier.sourceScopusen
local.identifier.otherGudkov, V.V., Ural State Technical University, 19, Mira st, Ekaterinburg, 620002, Russian Federation, Russian State Vocational Pedagogical University, 11, Mashinistroiteley st, Ekaterinburg, 620012, Russian Federationen
local.identifier.otherLonchakov, A.T., Institute for Metal Physics, Ural Department, the Russian Academy of Sciences, 18, Sofia Kovalevskay st, Ekaterinburg, 620041, Russian Federationen
local.identifier.otherZhevstovskikh, I.V., Institute for Metal Physics, Ural Department, the Russian Academy of Sciences, 18, Sofia Kovalevskay st, Ekaterinburg, 620041, Russian Federationen
local.identifier.otherSokolov, V.I., Institute for Metal Physics, Ural Department, the Russian Academy of Sciences, 18, Sofia Kovalevskay st, Ekaterinburg, 620041, Russian Federationen
local.identifier.otherKorostelin, Yu.V., P.N. Lebedev Physical Institute of the Russian Academy of Sciences, 53, Leninskiy pr., Moscow 119991, Russian Federationen
local.identifier.otherLandman, A.I., P.N. Lebedev Physical Institute of the Russian Academy of Sciences, 53, Leninskiy pr., Moscow 119991, Russian Federationen
local.identifier.otherSurikov, V.T., Institute of Solid State Chemistry, Ural Department, the Russian Academy of Sciences, 91, Pervomaiskay st, Ekaterinburg, 620041, Russian Federationen
local.identifier.otherWOS:000276029300206-
local.identifier.wos000276029300206-
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