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https://elar.rsvpu.ru/handle/123456789/15286
Title: | Characterization of II-VI: 3d crystals with the help of ultrasonic technique |
Authors: | Gudkov, V. V. Lonchakov, A. T. Zhevstovskikh, I. V. Sokolov, V. I. Korostelin, Yu. V. Landman, A. I. Surikov, V. T. Гудков, В. В. |
Issue Date: | 2009 |
Abstract: | The temperature dependence of ultrasonic attenuation is proposed to use for determining concentration of dopand in a diluted magnetic semiconductor. This non-destructive method can be used for the crystal in which attenuation is caused by relaxation in the Jahn-Teller system. Attenuation coefficient per the impurity ion β obtained at a fixed frequency was introduced as a parameter characterizing sensitivity of the method. This parameter was determined for a number of II-VI: 3d semiconductors: ZnSe:Ni2+, ZnTe:Ni2+, ZnSe:V2+, ZnSe:Cr2+, and ZnSe:Fe2+ at 54 MHz. Anomalously large value of β=23×10-18 dB cm2 was found for Cr2+ in ZnSe. © 2009 Elsevier B.V. All rights reserved. |
Keywords: | IMPURITY SEMICONDUCTOR TRANSITION METAL ULTRASONIC ATTENUATION ATTENUATION COEFFICIENT CONCENTRATION OF DILUTED MAGNETIC SEMICONDUCTORS FIXED FREQUENCY IMPURITY IONS JAHN-TELLER SYSTEM NONDESTRUCTIVE METHODS PARAMETER CHARACTERIZING SEMICONDUCTOR TRANSITION TEMPERATURE DEPENDENCE ULTRASONIC ATTENUATION ULTRASONIC TECHNIQUES CHROMIUM MAGNETIC SEMICONDUCTORS TRANSITION METALS ULTRASONIC TESTING ULTRASONIC WAVES ULTRASONICS ZINC COMPOUNDS CRYSTAL IMPURITIES |
ISSN: | 9214526 |
DOI: | 10.1016/j.physb.2009.08.284 |
SCOPUS: | 74449093230 |
WoS: | 000276029300206 |
Appears in Collections: | Научные публикации, проиндексированные в SCOPUS и WoS |
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