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https://elar.rsvpu.ru/handle/123456789/28135
Название: | Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals |
Автор: | Averkiev, N. S. Bersuker, I. B. Gudkov, V. V. Baryshnikov, K. A. Zhevstovskikh, I. V. Mayakin, V. Y. Monakhov, A. M. Sarychev, M. N. Sedov, V. E. Surikov, V. T. |
Дата публикации: | 2014 |
Издатель: | AIP Publishing |
Аннотация: | Transition-metal-doped semiconductor GaAs crystals are used as model systems for spintronic research, as well as in other applications. To explore the structure and properties of such impurities, we extended the methodology of ultrasonic investigation of the Jahn-Teller effect in dielectric impurity-centers to the study of significantly different semiconductor impurities using the GaAs:Cu crystal as an example. Phase velocity and attenuation of ultrasound in this system were measured in the temperature interval of 1.9-80 K at 52 MHz and 156 MHz. The anomaly in the velocity and a peak of attenuation found for the longitudinal and slow shear waves indicate the presence of the Jahn-Teller effect with the e-type local distortions of the CuGa4As impurity complex. The temperature dependence of the elastic modulus and relaxation time shows that below 5 K, the thermal activation mechanism of relaxation is possibly replaced by resonance type transitions. The main parameters of the Jahn-Teller effect, stabilization energy, minima positions and the barrier between them, frequency of pseudorotation of the distortions, and the tunneling splitting of the ground state energy, as well as the constant of exchange interaction between the two holes in Cu2+ centers and the concentration of the centers were estimated. © 2014 AIP Publishing LLC. |
Ключевые слова: | CRYSTAL IMPURITIES CRYSTAL STRUCTURE GALLIUM ARSENIDE GROUND STATE IMPURITIES POINT DEFECTS SEMICONDUCTING GALLIUM SHEAR FLOW SHEAR WAVES TEMPERATURE DISTRIBUTION TRANSITION METALS ULTRASONIC TESTING GROUND-STATE ENERGIES STABILIZATION ENERGY STRUCTURE AND PROPERTIES TEMPERATURE DEPENDENCE TEMPERATURE INTERVALS THERMAL ACTIVATION MECHANISMS TUNNELING SPLITTINGS ULTRASONIC INVESTIGATIONS JAHN-TELLER EFFECT |
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4895475 |
SCOPUS: | 84924567624 |
WoS: | 000342833700041 |
Сведения о поддержке: | Russian Foundation for Basic Research, RFBR |
Располагается в коллекциях: | Научные публикации, проиндексированные в SCOPUS и WoS |
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