Characterization of II-VI: 3d crystals with the help of ultrasonic technique

Abstract

The temperature dependence of ultrasonic attenuation is proposed to use for determining concentration of dopand in a diluted magnetic semiconductor. This non-destructive method can be used for the crystal in which attenuation is caused by relaxation in the Jahn-Teller system. Attenuation coefficient per the impurity ion β obtained at a fixed frequency was introduced as a parameter characterizing sensitivity of the method. This parameter was determined for a number of II-VI: 3d semiconductors: ZnSe:Ni2+, ZnTe:Ni2+, ZnSe:V2+, ZnSe:Cr2+, and ZnSe:Fe2+ at 54 MHz. Anomalously large value of β=23×10-18 dB cm2 was found for Cr2+ in ZnSe. © 2009 Elsevier B.V. All rights reserved.